S9018G

更新时间： 2024-01-07 07:10:28

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	221K
描述
Transistor

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中文翻译

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技术参数
数据手册

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S9018G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

S9018G 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

WBFBP-03B

S9018M

TRANSISTOR

(1.2×1.2×0.5)

unit: mm

TOP

DESCRIPTION

NPN Epitaxial Silicon Transistor

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

High Current Gain Bandwidth Product f_T=1.1 GHz (Typ)

BACK

APPLICATION

AM/FM Amplifier, Local Oscillator of FM/VHF Tuner

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: J8

B E

MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

℃

P_C

150

-55-150

T_J

Junction Temperature

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100µA, I_E=0

I_C= 1mA, I_B=0

I_E=100µA, I_C=0

V_CB=12V, I_E=0

V_CE=12V, I_B=0

V_EB= 3V, I_C=0

0.05

0.1

190

0.5

1.4

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=5V, I_C= 1mA

I_C=10mA, I_B= 1mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=10mA, I_B= 1mA

V_CE=5V, I_C= 5mA

f=400MHz

Transition frequency

600

1100

MHz

f_T

Collector output capacitance

C_obo

V_CB=10V,I_E=0,f=1MHz

12 3

中文翻译

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与S9018G相关器件

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S9018-G-BP-HF	MCC	获取价格	RF Small Signal Bipolar Transistor,
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S9018-H-AP-HF	MCC	获取价格	RF Small Signal Bipolar Transistor,