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S9018E(TO-92) PDF预览

S9018E(TO-92)

更新时间: 2024-11-18 20:45:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 375K
描述
Transistor

S9018E(TO-92) 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):39
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

S9018E(TO-92) 数据手册

 浏览型号S9018E(TO-92)的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
S9018 TRANSISTOR (NPN)  
1.EMITTER  
2.BASE  
FEATURES  
z
High Current Gain Bandwidth Product  
3.COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
25  
Unit  
V
Collector-Emitter Voltage  
18  
V
Emitter-Base Voltage  
4
V
Collector Current -Continuous  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
50  
mA  
W
PC  
0.4  
RθJA  
Tj  
312.5  
150  
/W  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
25  
18  
4
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100μA,IE=0  
IC=0.1mA,IB=0  
V
IE=100μA,IC=0  
V
VCB=20V,IE=0  
0.1  
0.1  
nA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=15V,IB=0  
Emitter cut-off current  
IEBO  
VEB=3V,IC=0  
0.1  
hFE  
VCE=5V, IC=1mA  
IC=10mA,IB=1mA  
IC=10mA,IB=1mA  
VCE=5V,IC=50mA,f=400MHz  
28  
270  
0.5  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
1.42  
800  
MHz  
CLASSIFICATION OF hFE  
RANK  
D
E
F
G
H
I
J
RANGE  
28-45  
39-60  
54-80  
72-108  
97-146  
132-198  
180-270  
A,Jun,2011  

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