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S9018G

更新时间: 2024-11-09 19:25:35
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
1页 130K
描述
Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

S9018G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.7最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:18 V配置:SINGLE
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):600 MHz
Base Number Matches:1

S9018G 数据手册

  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
S9018  
Micro Commercial Components  
Features  
·
·
·
·
·
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.31Watts(Tamb=25OC) of Power Dissipation.  
NPN Silicon  
Transistors  
Collector-current 0.05A  
Collector-base Voltage 25V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: S9018  
TO-92  
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
25  
18  
4.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=20Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=15Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=3.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
28  
---  
---  
270  
0.5  
1.4  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =10mAdc, IB=1.0mAdc)  
C
Base-Emitter Saturation Voltage  
G
(I =10mAdc, IB=1.0mAdc)  
C
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
600  
---  
MHz  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MM  
MIN  
(I =5.0mAdc, VCE=5.0Vdc,  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
C
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
f=400MHz)  
CLASSIFICATION OF H FE  
Rank  
Range  
G
70-108  
H
I
E
G
97-146  
130-200  
www.mccsemi.com  
Revision: 3  
2004/07/26  

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