S9018I

更新时间： 2024-02-19 23:19:18

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管射频小信号双极晶体管
页数	文件大小	规格书
2页	215K
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中文翻译

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数据手册

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S9018I 数据手册

M C C

S9018-G

S9018-H

S9018-I

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.31Watts(Tamb=25^OC) of Power Dissipation.

Collector-current 0.05A

NPN Silicon

Transistors

Collector-base Voltage 25V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking : S9018

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

4.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

(V_CB=20Vdc, I =0)

I_CEO

Collector Cutoff Current

(V_CE=15Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V_EB=3.0Vdc, I =0)

ON CHARACTERISTICS

h_FE

DC Current Gain

---

270

0.5

1.4

---

Vdc

(I =1.0mAdc, V_CE=5.0Vdc)

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I =10mAdc, I_B=1.0mAdc)

Base-Emitter Saturation Voltage

(I =10mAdc, I_B=1.0mAdc)

SMALL-SIGNAL CHARACTERISTICS

DIMENSIONS

f_T

Transistor Frequency

600

---

MHz

INCHES

(I =5.0mAdc, V_CE=5.0Vdc,

f=400MHz)

DIM

MIN

.170

.550

.010

.130

.096

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

CLASSIFICATION OF H FE

Rank

Range

70-108

97-146

130-198

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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