Datasheet > S9018

S9018

更新时间： 2024-11-21 03:33:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
3页	195K
描述
Silicon Epitaxial Planar Transistor

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S9018 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

S9018

FEATURES

High current gain bandwidth product.

Lead-free

power dissipation.(P_C=200mW)

APPLICATIONS

NPN epitaxial silicon transistor.

ORDERING INFORMATION

SOT-23

Type No.

S9018

Marking

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-55~150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100μA,I_E=0

V_(BR)CEO

V_(BR)EBO

I_C=0.1mA,I_B=0

I_E=-100μA,I_C=0

I_CBO

I_CEO

I_EBO

h_FE

V_CB=20V,I_E=0

V_CE=15V,I_B=0

V_EB=3V,I_C=0

0.1

190

μA

Collector cut-off current

Emitter cut-off current

DC current gain

V_CE=5V,I_C=1mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

I_C=10 mA, I_B= 1mA

V_CE(sat)

V_BE(sat)

0.5

1.4

V_CE=5V, I_C= 5mA

f=400MHz

Transition frequency

f_T

600

MHz

Document number: BL/SSSTC085

Rev.A

www.galaxycn.com

12 3

中文翻译

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