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S9015W PDF预览

S9015W

更新时间: 2024-11-18 08:55:39
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
1页 460K
描述
TRANSISTOR(PNP)

S9015W 数据手册

  
S9015W  
TRANSISTOR(PNP)  
SOT323  
FEATURES  
Small Surface Mount Package  
High DC Current Gain  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
1. BASE  
Collector-Base Voltage  
-50  
2. EMITTER  
3. COLLECTOR  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-45  
V
-5  
V
Collector Current  
-100  
200  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
PC  
625  
RΘJA  
Tj  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
Typ  
Max  
Unit  
V(BR)CBO  
IC=-100µA, IE=0  
-50  
V
V
Collector-base breakdown voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=-100µA, IB=0  
-45  
-5  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IE=-100µA, IC=0  
V
VCB=-50V, IE=0  
-100  
-100  
1000  
-0.3  
-1  
nA  
nA  
IEBO  
VEB=-5V, IC=0  
Emitter cut-off current  
hFE  
VCE=-5V, IC=-1mA  
IC=-100mA, IB=-10mA  
IC=-100mA, IB=-10mA  
VCE=-5V, IC=-1mA  
VCE=-5V,IC=-10mA , f=30MHz  
VCB=-10V, IE=0, f=1MHz  
200  
DC current gain  
VCE(sat)  
VBE(sat)  
VBE  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
-0.6  
150  
-0.75  
V
fT  
MHz  
pF  
Transition frequency  
Cob  
7
Collector output capacitance  
CLASSIFICATION OF hFE  
RANK  
L
H
4501000  
M6  
RANGE  
200450  
MARKING  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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