Datasheet > S9018

S9018

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
1页	210K
描述
General Purpose Transistor

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中文翻译

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数据手册

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S9018 数据手册

S9018

NPN Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

FEATURES

Collector

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Power dissipation

Base

PCM : 0.2 W

Collector Current

ICM : 0.05 A

Emitter

Collector-base voltage

V(BR)CBO : 25 V

Top View

Operating & storage junction temperature

Tj, Tstg : - 55^OC ~ + 150^OC

All Dimension in mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= 100µA, I_E=0

Ic= 0.1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA, I_C=0

V_CB=20V, I_E=0

0.1

190

0.5

1.4

µA

I_CEO

V_CE=15V, I_B=0

Collector cut-off current

I_EBO

V_EB= 3V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=5V, I_C= 1mA

I_C=10mA, I_B= 1mA

DC current gain

V_CE(sat)

V_BE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE=5V, I_C= 5mA

f=400MHz

600

MHz

Transition frequency

f_T

DEVICE MARKING

S9018 = J8

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2004 Rev. B

Page 1 of 1

中文翻译

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