Datasheet > S9016

S9016

更新时间： 2024-11-18 03:33:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
3页	196K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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S9016 数据手册

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

S9016

FEATURES

Collector Current.(I_C= 25mA）

Lead-free

Power dissipation.(P_C=200mW)

APPLICATIONS

AM converter, FM/RM amplifier of low noise.

SOT-23

ORDERING INFORMATION

Type No.

S9016

Marking

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-55~150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100μA,I_E=0

V_(BR)CEO

V_(BR)EBO

I_C=0.1mA,I_B=0

I_E=100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=30V,I_E=0

V_EB=3V,I_C=0

0.1

198

0.3

μA

Emitter cut-off current

DC current gain

V_CE=5V,I_C=1mA

Collector-emitter saturation voltage

Transition frequency

I_C=10mA, I_B= 1mA

V_CE(sat)

f_T

V_CE=5V, I_C= 1mA

400

MHz

Output capacitance

V_CB=10V, I_E=0,f=1MHz

C_ob

1.6

Document number: BL/SSSTC127

Rev.A

www.galaxycn.com

12 3

中文翻译

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