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S9018

更新时间: 2024-11-18 08:55:39
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
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描述
TRANSISTOR (NPN)

S9018 数据手册

  
S9018  
TRANSISTOR (NPN)  
SOT-23  
1. BASE  
FEATURES  
2. EMITTER  
3. COLLECTOR  
z
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner  
High Current Gain Bandwidth Product fT=1.1 GHz (Typ)  
z
MARKINGJ8  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
30  
Units  
V
VCBO  
Collector-Base Voltage  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
50  
mA  
mW  
PC  
200  
150  
-55-150  
Tj  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= 100μA, IE=0  
IC= 1mA, IB=0  
Min  
30  
15  
5
Typ  
Max  
Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
V
IE=100μA, IC=0  
VCB=12V, IE=0  
0.05  
0.1  
0.1  
190  
0.5  
1.4  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=12V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 3V, IC=0  
DC current gain  
hFE(1)  
VCE=5V, IC= 1mA  
IC=10mA, IB= 1mA  
IC=10mA, IB= 1mA  
70  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
VCE=5V, IC= 5mA  
f=400MHz  
Transition frequency  
850  
MHz  
fT  
CLASSIFICATION OF hFE  
Rank  
L
H
70-105  
105-190  
Range  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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