Datasheet > S9015T-D

S9015T-D

更新时间： 2024-09-16 01:02:31

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	603K
描述
PNP Plastic Encapsulated Transistor

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中文翻译

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数据手册

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S9015T-D 数据手册

S9015T

-0.1A , -50V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES

ꢀ

General Purpose Switching and Amplification.

High Total Power Dissipation.(PC=0.45W)

High h_FEand Good Linearity

CLASSIFICATION OF h_FE

Product-Rank

S9015T-A

S9015T-B

100~300

S9015T-C

200~600

S9015T-D

400~1000

Range

60~150

1Emitter

2Base

3Collector

Collector

Base

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

Min.

Max.

0.30

0.51

1.27 TYP.

1.10

2.42

0.36

1.40

2.66

0.76

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

-50

Collector to Emitter Voltage

Emitter to Base Voltage

-45

-5

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-0.1

P_C

0.45

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min

-50

-45

-5

Typ

Max

Unit

Test condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

I_C= -0.1mA, I_E=0

I_C= -1mA, I_B=0

I_E= -0.1mA, I_C=0

V_CB= -50V, I_E=0

-0.05

1000

-0.3

-1

µA

Emitter Cut-Off Current

I_EBO

V_EB= -5V, I_C=0

DC Current Gain

h_FE

V_CE= -5V, I_C= -1mA

I_C= -100mA, I_B= -10mA

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

V_BE(sat)

f_T

100

MHz V_CE= -5V, I_C= -10mA, f=30MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

23-Aug-2012 Rev. A

Page 1 of 3

12 3

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