Datasheet > S9014W

S9014W

更新时间： 2024-11-20 08:55:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	264K
描述
Plastic Encapsulated Transistor

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S9014W 数据手册

S9014W

NPN Silicon

Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

FEATURE

Complementary to S9015W

Top View

C B

PACKAGING INFORMATION

Weight: 0.0074 g

Collector

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

REF.

Min.

Max.

2.20

2.45

1.35

1.10

1.40

0.40

MARKING CODE

Base

1.80

1.15

0.80

1.20

0.20

0.08

0.25

0.650 TYP.

Emitter

ABSOLUTE MAXIMUM RATINGS (at T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current – Continuous

Collector Power Dissipation

Junction, Storage Temperature

100

200

℃

P_C

T_J, T_STG

+150, -55 ~ +150

ELECTRICAL CHARACTERISTICS (at T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base Breakdown Voltage

Collector-emitter Breakdown Voltage

Emitter-base Breakdown Voltage

Collector Cut-off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 100μA, I_E= 0

I_C= 0.1mA, I_B= 0

I_E= 100μA, I_C= 0

V_CB= 50 V, I_E= 0

V_CE= 35V, I_B= 0

100

300

1000

Collector Cut-off Current

I_CEO

Emitter Cut-off Current

I_EBO

V_EB= 3V, I_C= 0

Collector-emitter Saturation Voltage

Base-emitter Saturation Voltage

DC Current Gain

_CE(sat)

_BE(sat)

h_FE

I_C= 100mA, I_B= 5mA

V_CE= 5V, I_C= 1mA

200

150

Transition Frequency

MHz

V_CE= 5V, I_C= 10mA, f = 30MHz

CLASSIFICATION OF hFE

Rank

hFE

200 - 450

450 - 1000

01-June-2002 Rev. A

Page 1 of 2

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