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S9015-AP PDF预览

S9015-AP

更新时间: 2024-11-17 13:13:11
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 227K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

S9015-AP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

S9015-AP 数据手册

 浏览型号S9015-AP的Datasheet PDF文件第2页 
S9015-B  
S9015-C  
S9015-D  
M C C  
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20736 Marilla Street Chatsworth  
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TM  
Micro Commercial Components  
Features  
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.45Watts(Tamb=25OC) of Power Dissipation.  
Collector-current -0.1A  
PNP Silicon  
Transistors  
Collector-base Voltage -50V  
Operating and storage junction temperature range: -55OC to +150OC  
·
Marking: S9015  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
·
·
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
-50  
-45  
-5.0  
---  
---  
---  
Vdc  
Vdc  
(I = -100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I = -1.0mAdc, IB=0)  
C
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I = -100uAdc, IC=0)  
E
Collector Cutoff Current  
-0.05  
-0.05  
uAdc  
uAdc  
(VCB= -50Vdc, I =0)  
E
IEBO  
Emitter Cutoff Current  
---  
(VEB= -5.0Vdc, IC=0)  
ON CHARACTERISTICS  
D
hFE  
DC Current Gain  
60  
---  
---  
1000  
-0.3  
-1.0  
---  
(I = -1.0mAdc, VCE= -5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Vdc  
Vdc  
(I = -100mAdc, IB= -10mAdc)  
C
Base-Emitter Saturation Voltage  
(I = -100mAdc, IB= -10mAdc)  
C
SMALL-SIGNAL CHARACTERISTICS  
G
fT  
Transistor Frequency  
150  
---  
MHz  
(I =-10mAdc, VCE=-5.0Vdc, f=30MHz)  
C
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
CLASSIFICATION OF HFE  
Rank  
B
C
D
Range  
100-300  
200-600  
400-1000  
E
G
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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