Datasheet > S9015B

S9015B

更新时间： 2024-11-17 21:06:47

品牌	Logo	应用领域
商朗 - LUNSURE		/
页数	文件大小	规格书
1页	80K
描述
Transistor

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中文翻译

获取价格

数据手册

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S9015B 数据手册

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

S9015

Features

TO-92 Plastic-Encapsulate Transistors

Capable of 0.45Watts(Tamb=25^OC) of Power Dissipation.

Collector-current 0.1A

PNP Silicon

Transistors

Collector-base Voltage 50V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking Code: S9015

Pin Configuration

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =1.0mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.05

uAdc

(V_CB=50Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

---

ON CHARACTERISTICS

h_FE

DC Current Gain

---

1000

0.3

---

Vdc

(I =1.0mAdc, V_CE=5.0Vdc)

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I =100mAdc, I_B=10mAdc)

Base-Emitter Saturation Voltage

1.0

(I =100mAdc, I_B=10mAdc)

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

150

---

MHz

(I =10mAdc, V_CE=5.0Vdc, f=30MHz)

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

DIM

MAX

.190

.590

.020

.160

.104

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

CLASSIFICATION OF HFE

Rank

Range

120-200

200-400

400-500

www.cnelectr.com

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