Datasheet > S9015

S9015

更新时间： 2024-09-15 06:09:55

品牌	Logo	应用领域
DAYA		晶体晶体管
页数	文件大小	规格书
2页	125K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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S9015 数据手册

TO-92 Plastic-Encapsulate Transistors

TO-92

S9015

TRANSISTOR (PNP)

1.EMITTER

FEATURES

2. BASE

High total power dissipation.(P_C=0.45W)

High h_FEand good linearity

3. COLLECTOR

Complementary to S9014

1 2 3

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-45

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.1

P_C

0.45

150

℃

T_j

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -100μA, I_E=0

I_C= -1mA, I_B=0

MIN

-50

-45

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100μA, I_C=0

V_CB=-50V, I_E=0

-0.05

1000

-0.3

-1

μA

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-5V, I_C= -1mA

I_C=-100mA, I_B= -10mA

I_C=-100mA, I_B=-10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=-5V, I_C= -10mA

f=30MHz

Transition frequency

100

MHz

f_T

CLASSIFICATION OF h_FE(1)

Rank

60-150

100-300

200-600

400-1000

Range

中文翻译

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与S9015相关器件

型号	品牌	获取价格	描述	数据表
S9015A	WEITRON	获取价格	Small Signal Bipolar Transistor
S9015A(TO-92)	CJ	获取价格	Transistor
S9015A-G	WEITRON	获取价格	Transistor
S9015-AP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
S9015B	MCC	获取价格	100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3
S9015B	LUNSURE	获取价格	Transistor
S9015B	WEITRON	获取价格	Small Signal Bipolar Transistor
S9015-B	MCC	获取价格	PNP Silicon Transistors
S9015-B-A	MCC	获取价格	Transistor
S9015-B-AP	MCC	获取价格	暂无描述