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S9015B PDF预览

S9015B

更新时间: 2024-11-17 21:19:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
1页 134K
描述
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

S9015B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.27最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

S9015B 数据手册

  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
S9015  
Micro Commercial Components  
Features  
·
·
·
·
·
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.45Watts(Tamb=25OC) of Power Dissipation.  
PNP Silicon  
Transistors  
Collector-current 0.1A  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: S9015  
Pin Configuration  
TO-92  
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
50  
45  
5.0  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
C
(I =1.0mAdc, IB=0)  
C
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.05  
0.05  
uAdc  
uAdc  
(VCB=50Vdc, I =0)  
E
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
---  
ON CHARACTERISTICS  
D
hFE  
DC Current Gain  
60  
---  
---  
1000  
0.3  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =100mAdc, IB=10mAdc)  
C
Base-Emitter Saturation Voltage  
1.0  
(I =100mAdc, IB=10mAdc)  
C
SMALL-SIGNAL CHARACTERISTICS  
G
fT  
Transistor Frequency  
150  
---  
MHz  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
C
DIMENSIONS  
MM  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
DIM  
A
B
C
D
MAX  
.190  
.190  
.590  
.020  
.160  
.104  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
CLASSIFICATION OF HFE  
Rank  
Range  
B
C
D
120-200  
200-400  
400-500  
E
G
www.mccsemi.com  
Revision: 3  
2004/07/26  

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