Datasheet > S9015C(TO-92)

S9015C(TO-92)

更新时间： 2024-11-30 21:11:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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描述
Transistor

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技术参数
数据手册

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S9015C(TO-92) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

S9015C(TO-92) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

S9015

TRANSISTOR (PNP)

1.EMITTER

2. BASE

FEATURES

High Total Power Dissipation.(P_C=0.45W)

High h_FEand Good Linearity

Complementary to S9014

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-45

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.1

P_C

0.45

150

℃

T_j

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -100μA, I_E=0

I_C= -1mA, I_B=0

Min

-50

-45

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100μA, I_C=0

V_CB=-50V, I_E=0

-0.05

1000

-0.3

-1

μA

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-5V, I_C= -1mA

I_C=-100mA, I_B= -10mA

I_C=-100mA, I_B=-10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=-5V, I_C= -10mA

f=30MHz

Transition frequency

100

MHz

f_T

CLASSIFICATION OF h_FE(1)

Rank

60-150

100-300

200-600

400-1000

Range

A,June,2011

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