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S9014WH

更新时间: 2024-11-17 20:51:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 341K
描述
Transistor

S9014WH 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

S9014WH 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-323 Plastic-Encapsulate Transistors  
S9014W TRANSISTOR (NPN)  
SOT323  
FEATURES  
Complementary to S9015W  
Small Surface Mount Package  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
1. BASE  
Collector-Base Voltage  
50  
2. EMITTER  
3. COLLECTOR  
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
V
5
V
Collector Current  
100  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
200  
PC  
625  
RΘJA  
Tj  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
V(BR)CBO  
IC=100µA, IE=0  
50  
V
Collector-base breakdown voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100µA, IB=0  
45  
5
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IE=100µA, IC=0  
V
VCB=50V, IE=0  
100  
100  
100  
1000  
0.3  
nA  
nA  
nA  
ICEO  
VCE=35V, IB=0  
Collector cut-off current  
IEBO  
VEB=4V, IC=0  
Emitter cut-off current  
hFE  
VCE=5V, IC=1mA  
IC=100mA, IB=5mA  
IC=100mA, IB=5mA  
VCE=5V, IC=2mA  
VCE=5V,IC=10mA , f=30MHz  
VCB=10V, IE=0, f=1MHz  
200  
DC current gain  
VCE(sat)  
VBE(sat)  
VBE  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
1
0.58  
150  
0.7  
V
fT  
MHz  
pF  
Transition frequency  
Cob  
3.5  
Collector output capacitance  
CLASSIFICATION OF hFE  
RANK  
L
H
4501000  
J6  
RANGE  
200450  
MARKING  
A,Oct,2010  

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