Datasheet > S9014WH

S9014WH

更新时间： 2024-11-10 20:51:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	341K
描述
Transistor

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中文翻译

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技术参数
数据手册

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S9014WH 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

S9014WH 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

S9014W TRANSISTOR (NPN)

SOT–323

FEATURES

 Complementary to S9015W

 Small Surface Mount Package

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1. BASE

Collector-Base Voltage

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

200

P_C

625

R_ΘJA

T_j

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=100µA, I_E=0

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA, I_B=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA, I_C=0

V_CB=50V, I_E=0

100

1000

0.3

I_CEO

V_CE=35V, I_B=0

Collector cut-off current

I_EBO

V_EB=4V, I_C=0

Emitter cut-off current

h_FE

V_CE=5V, I_C=1mA

I_C=100mA, I_B=5mA

V_CE=5V, I_C=2mA

V_CE=5V,I_C=10mA , f=30MHz

V_CB=10V, I_E=0, f=1MHz

200

DC current gain

V_CE(sat)

V_BE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.58

150

0.7

f_T

MHz

Transition frequency

C_ob

3.5

Collector output capacitance

CLASSIFICATION OF h_FE

RANK

450–1000

RANGE

200–450

MARKING

A,Oct,2010

中文翻译

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