Datasheet > S9015

S9015

更新时间： 2024-11-20 17:15:47

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友台半导体 - UMW		/
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描述
三极管

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数据手册

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S9015 数据手册

UMW

UMW S9015

SOT-23 Plastic-Encapsulate Transistors

SOT-23

S9015 ^{TRANSISTOR (PNP)}

FEATURES

Complementary to S9014

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: M6

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

-50

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-45

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.1

0.2

P_C

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -100μA, I_E=0

I_C= -0.1mA, I_B=0

I_E=-100μA, I_C=0

Min

-50

-45

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB=-50 V, I_E=0

-0.1

1000

-0.3

-1

μA

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-5V, I_C= -1mA

I_C=-100mA, I_B= -10mA

I_C=-100mA, I_B=-10mA

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=-5V, I_C= -10mA

f=30MHz

Transition frequency

f_T

MHz

CLASSIFICATION OF h_FE

Rank

200-450

450-1000

Range

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S9015-AP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
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S9015-B-AP	MCC	获取价格	暂无描述