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S9015 PDF预览

S9015

更新时间: 2024-11-07 17:15:47
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
3页 331K
描述
三极管

S9015 数据手册

 浏览型号S9015的Datasheet PDF文件第2页浏览型号S9015的Datasheet PDF文件第3页 
R
UMW  
UMW S9015  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
S9015 TRANSISTOR (PNP)  
FEATURES  
Complementary to S9014  
1. BASE  
z
2. EMITTER  
3. COLLECTOR  
MARKING: M6  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
-45  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-0.1  
0.2  
A
PC  
W
Tj  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= -100μA, IE=0  
IC = -0.1mA, IB=0  
IE=-100μA, IC=0  
Min  
-50  
-45  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
VCB=-50 V, IE=0  
-0.1  
-0.1  
1000  
-0.3  
-1  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB= -5V, IC=0  
DC current gain  
hFE  
VCE=-5V, IC= -1mA  
IC=-100mA, IB= -10mA  
IC=-100mA, IB=-10mA  
200  
150  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
VCE=-5V, IC= -10mA  
f=30MHz  
Transition frequency  
fT  
MHz  
CLASSIFICATION OF hFE  
Rank  
L
H
200-450  
450-1000  
Range  
www.umw-ic.com  
2
友台半导体有限公司  

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