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S9015 PDF预览

S9015

更新时间: 2024-11-19 08:55:39
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页数 文件大小 规格书
3页 46K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

S9015 数据手册

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TIGER ELECTRONIC CO.,LTD  
S9015  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The S9015 is designed for use in pre-amplifier of low level and low  
noise.  
Features  
High Total Power Dissipation. (PD:450mW)  
Complementary to S9014  
High hFE and Good Linearity.  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................... -55~+150°C  
Junction Temperature ..................................................................................... +150°C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ......................................................................................... 50 V  
VCEO Collector to Emitter Voltage ...................................................................................... 45 V  
VEBO Emitter to Base Voltage .............................................................................................. 5 V  
IC Collector Current........................................................................................................ 100 mA  
(Ta=25°C)  
Characteristics  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min.  
Typ.  
-
-
-
-
Max.  
-
Unit  
V
V
Test Conditions  
IC=100uA, IE=0  
IC=1mA, IB=0  
IE=100uA, IC=0  
VCB=50V, IE=0  
50  
45  
5.0  
-
-
-
-
-
V
50  
50  
0.7  
1.0  
0.75  
600  
7.0  
-
nA  
nA  
V
V
V
IEBO  
-
VEB=5V, IC=0  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
0.20  
0.82  
0.65  
200  
4.5  
190  
IC=100mA, IB=5mA  
IC=100mA, IB=5mA  
VCE=5V, IC=2mA  
VCE=5V, IC=1mA  
VCB=10V, f=1MHz, IE=0  
VCE=5V, IC=10mA  
-
0.6  
100  
-
Cob  
fT  
pF  
MHz  
100  
Classification on hFE1  
Rank  
B
C
Range  
100-300  
200-600  
TIGER ELECTRONIC CO.,LTD  

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