Datasheet > S9015

S9015

更新时间： 2024-09-15 08:55:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	606K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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S9015 数据手册

S9015

TRANSISTOR(PNP)

SOT-23

FEATURES

1. BASE

Complementary to S9014

2. EMITTER

3. COLLECTOR

MARKING: M6

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

-50

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-45

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.1

0.2

P_C

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-50

-45

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100μA, I_E=0

I_C= -0.1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-50 V, I_E=0

-0.1

1000

-0.3

-1

μA

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-5V, I_C= -1mA

I_C=-100mA, I_B= -10mA

I_C=-100mA, I_B=-10mA

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

_CE=-5V, I_C= -10mA

Transition frequency

f_T

MHz

f=30MHz

CLASSIFICATION OF h_FE

Rank

200-450

450-1000

Range

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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