Datasheet > S9015

S9015

更新时间： 2024-06-27 12:13:12

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
4页	1129K
描述
SOT-23

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中文翻译

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数据手册

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S9015 数据手册

S9015

SOT-23 Plastic-Encapsulate Transistors

S9015 TRANSISTOR (PNP)

SOT-23

FEATURES

Complementary To S9014

1. BASE

MARKING: M6

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-50

Unit

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-5

Collector Current-Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

-100

200

℃/W

℃

P_C

625

RΘJA

T_j

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)

Typ

Min

Parameter

Test conditions

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Max

Unit

I_C=-100μA, IE=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-50

-45

-5

I_C=-0.1mA,I_B=0

I_E=-100μA,I_C=0

V_CB=-50V, IE=0

μA

-0.1

1000

-0.3

-1

V_EB=-5V, IC=0

Emitter cut-off current

DC current gain

I_EBO

V_CE=-5V, IC=-1mA

I_C=-100mA, IB=-10mA

VCE=-5V, IC=-10mA f=30MHz

h_FE

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

MHz

f_T

CLASSIFICATION OF h_FE

Rank

200-450

400-1000

Range

DN:T21525A0

http://www.microdiode.com

Rev:2021A0

Page :1

12 3 4

中文翻译

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S9015-B-AP	MCC	获取价格	暂无描述