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S9014-B-BP PDF预览

S9014-B-BP

更新时间: 2024-11-19 13:13:11
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 211K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

S9014-B-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.42最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

S9014-B-BP 数据手册

 浏览型号S9014-B-BP的Datasheet PDF文件第2页 
M C C  
S9014-B  
S9014-C  
S9014-D  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
Micro Commercial Components  
Features  
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.1A  
NPN Silicon  
Transistors  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : S9014  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
·
·
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
50  
45  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
(VCB=50Vdc, IE=0)  
Collector Cutoff Current  
(VCE=35Vdc, IB=0)  
Emitter Cutoff Current  
(VEB=3.0Vdc, IC=0)  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
ICEO  
IEBO  
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
60  
---  
---  
1000  
0.3  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
C
B
Base-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
1.0  
G
C
B
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
C
150  
---  
MHz  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
CLASSIFICATION OF HFE  
Rank  
Range  
B
C
D
E
G
100-300  
200-600  
400-1000  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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