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S9014-C1-BP PDF预览

S9014-C1-BP

更新时间: 2024-09-21 19:44:43
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
1页 124K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

S9014-C1-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

S9014-C1-BP 数据手册

  
M C C  
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S9014  
Features  
·
·
·
·
·
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.  
NPN Silicon  
Transistors  
Collector-current 0.1A  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: S9014  
Pin Configuration  
TO-92  
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
50  
45  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
(VCB=50Vdc, IE=0)  
Collector Cutoff Current  
(VCE=35Vdc, IB=0)  
Emitter Cutoff Current  
(VEB=3.0Vdc, IC=0)  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
ICEO  
IEBO  
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
60  
---  
---  
1000  
0.3  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
C
B
Base-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
1.0  
G
C
B
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
C
150  
---  
MHz  
INCHES  
MM  
DIM  
A
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MAX  
MIN  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
MAX  
4.70  
4.70  
---  
NOTE  
.185  
.185  
---  
B
C
CLASSIFICATION OF HFE (1)  
Rank  
Range  
A
B
C1  
200-300  
C2  
300-400  
C3  
400-500  
D
D
.020  
.145  
.105  
0.63  
3.68  
2.67  
E
G
60-150  
120-200  
500-1000  
www.mccsemi.com  
Revision: 2  
2003/06/30  

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