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S9014-BP

更新时间: 2024-11-08 19:57:43
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 170K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

S9014-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

S9014-BP 数据手册

 浏览型号S9014-BP的Datasheet PDF文件第2页 
S9014  
S9014-B  
S9014-C  
S9014-D  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
Micro Commercial Components  
Features  
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.1A  
NPN Silicon  
Transistors  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : S9014  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
TO-92  
A
E
Classification Rating 94V-0 and MSL Rating 1  
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
50  
45  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
(VCB=50Vdc, IE=0)  
Collector Cutoff Current  
(VCE=35Vdc, IB=0)  
Emitter Cutoff Current  
(VEB=3.0Vdc, IC=0)  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
ICEO  
IEBO  
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
60  
---  
---  
1000  
0.3  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
C
B
Base-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
1.0  
G
C
B
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
C
150  
---  
MHz  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
CLASSIFICATION OF HFE  
Rank  
Range  
B
C
D
E
G
100-300  
200-600  
400-1000  
www.mccsemi.com  
1 of 2  
Revision: 6  
2010/08/18  

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