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S9014C(TO-92) PDF预览

S9014C(TO-92)

更新时间: 2024-11-08 17:44:43
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 541K
描述
Transistor

S9014C(TO-92) 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

S9014C(TO-92) 数据手册

 浏览型号S9014C(TO-92)的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO-92  
S9014  
TRANSISTOR (NPN)  
1. EMITTER  
2. BASE  
FEATURES  
z
High Total Power Dissipation.(PC=0.45W)  
High hFE and Good Linearity  
Complementary to S9015  
z
z
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.1  
A
PC  
0.45  
150  
-55-150  
W
TJ  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
50  
45  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100μA, IE=0  
IC= 1mA, IB=0  
V
IE=100μA, IC=0  
VCB=50V, IE=0  
V
0.1  
0.1  
0.1  
1000  
0.3  
1
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=35V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 5V, IC=0  
DC current gain  
hFE  
VCE=5V, IC= 1mA  
IC=100mA, IB= 5mA  
IC=100mA, IB= 5mA  
60  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
V
CE=5V, IC= 10mA  
Transition frequency  
fT  
150  
MHz  
f=30MHz  
CLASSIFICATION OF hFE(1)  
Rank  
A
B
C
D
60-150  
100-300  
200-600  
400-1000  
Range  
A,Apr,2011  
A,Apr,2011  

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