Datasheet > S9014-D-B

S9014-D-B

更新时间： 2024-11-08 21:11:39

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2页	75K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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S9014-D-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

S9014-D-B 数据手册

S9014

S9014-B

S9014-C

S9014-D

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.4Watts(Tamb=25^OC) of Power Dissipation.

Collector-current 0.1A

NPN Silicon

Transistors

Collector-base Voltage 50V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking : S9014

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

(V_CB=50Vdc, I_E=0)

Collector Cutoff Current

(V_CE=35Vdc, I_B=0)

Emitter Cutoff Current

(V_EB=3.0Vdc, I_C=0)

0.1

uAdc

I_CEO

I_EBO

ON CHARACTERISTICS

h_FE

DC Current Gain

---

1000

0.3

---

Vdc

(I =1.0mAdc, V_CE=5.0Vdc)

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I =100mAdc, I =5.0mAdc)

Base-Emitter Saturation Voltage

(I =100mAdc, I =5.0mAdc)

1.0

SMALL-SIGNAL CHARACTERISTICS

DIMENSIONS

f_T

Transistor Frequency

(I =10mAdc, V_CE=5.0Vdc, f=30MHz)

150

---

MHz

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

CLASSIFICATION OF HFE

Rank

Range

100-300

200-600

400-1000

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Revision: 5

2007/03/02

中文翻译

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