Datasheet > S9014-TO-92

S9014-TO-92

更新时间： 2024-09-16 01:25:23

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2511K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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S9014-TO-92 数据手册

S9014

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR( NP N )

Features

TO- 9 2

●

High Total Power Dissipation.(P_C=0.45W)

High hFE and Good Linearity

Complementary to S9015

●

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃/W

℃

E B C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

450

P_C

R_ΘJA

T_j

416

150

Storage Temperature

T_stg

-55～+150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100μA, I_E=0

I_C= 1mA, I_B=0

I_E=100μA, I_C=0

V_CB=50V, I_E=0

0.1

μA

Collector cut-off current

I_CEO

V_CE=35V, I_B=0

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

0.1

1000

0.3

DC current gain

h_FE

V_CE=5V, I_C= 1mA

I_C=100mA, I_B= 5mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE(sat)

V_BE(sat)

f_T

_CE=5V, I_C= 10mA

Transition frequency

150

MHz

f=30MHz

CLASSIFICATION OF h_FE

Rank

60-150

100-300

200-600

400-1000

Range

igh Diode Semiconductor

12 3 4

中文翻译

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