S9014M

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	163K
描述
TRANSISTOR

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中文翻译

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数据手册

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S9014M 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TOP

S9014M TRANSISTOR

DESCRIPTION

NPN Epitaxial Silicon Transistor

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

High h_FEand good linearity

Complementary to S9015M

BACK

APPLICATION

Pre-Amplifier, Low Level & Low Noise

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: J6

B E

MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

0.1

P_C

0.15

℃

T_J

Junction Temperature

Storage Temperature

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS(Ta=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

I_C= 100μA, I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 0.1mA, I_B=0

I_E=100μA, I_C=0

V_CB=50 V , I_E=0

V_CE=35V , I_B=0

0.1

1000

0.3

μA

Collector cut-off current

I_CEO

V_EB= 4V , I_C=0

V_CE=5V, I_C= 1mA

I_C=100 mA, I_B= 5mA

V_CE=5V, I_C= 10mA

Emitter cut-off current

I_EBO

DC current gain

h_FE

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Transition frequency

f_T

MHz

Collector output capacitance

C_obo

V_CB=10V,I_E=0,f=1MHz

V_CE=5V,I_c=0.2mA,

3.5

Noise figure

12 3

中文翻译

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