5秒后页面跳转
S9014-C-BP-HF PDF预览

S9014-C-BP-HF

更新时间: 2024-11-18 19:52:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 265K
描述
Small Signal Bipolar Transistor,

S9014-C-BP-HF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
湿度敏感等级:1峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

S9014-C-BP-HF 数据手册

 浏览型号S9014-C-BP-HF的Datasheet PDF文件第2页 
M C C  
S9014-B  
S9014-C  
S9014-D  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.1A  
NPN Silicon  
Transistors  
Collector-base Voltage 50V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : S9014  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
·
·
·
A
E
Halogen free available upon request by adding suffix "-HF"  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
50  
45  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
C
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
(VCB=50Vdc, IE=0)  
Collector Cutoff Current  
(VCE=35Vdc, IB=0)  
Emitter Cutoff Current  
(VEB=3.0Vdc, IC=0)  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
ICEO  
IEBO  
D
ON CHARACTERISTICS  
hFE  
DC Current Gain  
60  
---  
---  
1000  
0.3  
---  
Vdc  
Vdc  
(I =1.0mAdc, VCE=5.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
E
E
B
C
B
B
C
C
Base-Emitter Saturation Voltage  
(I =100mAdc, I =5.0mAdc)  
1.0  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
C
B
G
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
150  
---  
MHz  
DIMENSIONS  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
C
INCHES  
MM  
DIM  
A
B
C
D
MIN  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
CLASSIFICATION OF HFE  
Rank  
B
C
D
Range  
100-300  
200-600  
400-1000  
E
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 2  
Revision: D  
2013/01/01  

与S9014-C-BP-HF相关器件

型号 品牌 获取价格 描述 数据表
S9014C-G WEITRON

获取价格

Transistor
S9014C-TS01-AP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
S9014C-TS01-BP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
S9014D CJ

获取价格

Transistor
S9014-D MCC

获取价格

NPN Silicon Transistors
S9014-D-A MCC

获取价格

Transistor
S9014-D-AP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
S9014-D-AP-HF MCC

获取价格

Small Signal Bipolar Transistor,
S9014-D-B MCC

获取价格

Transistor
S9014-D-BP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,