M C C
S9014-B
S9014-C
S9014-D
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TM
Micro Commercial Components
Features
•
•
•
•
•
•
·
TO-92 Plastic-Encapsulate Transistors
Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.
Collector-current 0.1A
NPN Silicon
Transistors
Collector-base Voltage 50V
Operating and storage junction temperature range: -55OC to +150OC
Marking : S9014
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
TO-92
·
·
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
B
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
50
45
5.0
---
---
---
---
---
Vdc
Vdc
(I =100uAdc, IE=0)
C
Collector-Emitter Breakdown Voltage
(I =0.1mAdc, IB=0)
C
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =100uAdc, IC=0)
E
Collector Cutoff Current
(VCB=50Vdc, IE=0)
Collector Cutoff Current
(VCE=35Vdc, IB=0)
Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
0.1
0.1
0.1
uAdc
uAdc
uAdc
ICEO
IEBO
D
ON CHARACTERISTICS
hFE
DC Current Gain
60
---
---
1000
0.3
---
Vdc
Vdc
(I =1.0mAdc, VCE=5.0Vdc)
C
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
(I =100mAdc, I =5.0mAdc)
C
B
Base-Emitter Saturation Voltage
(I =100mAdc, I =5.0mAdc)
1.0
G
C
B
SMALL-SIGNAL CHARACTERISTICS
DIMENSIONS
fT
Transistor Frequency
(I =10mAdc, VCE=5.0Vdc, f=30MHz)
C
150
---
MHz
INCHES
MM
DIM
A
B
C
D
MIN
.170
.170
.550
.010
.130
.096
MAX
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
.190
.190
.590
.020
.160
.104
CLASSIFICATION OF HFE
Rank
Range
B
C
D
E
G
100-300
200-600
400-1000
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Revision: A
2011/01/01