S9014-BP-HF

更新时间： 2024-11-19 13:13:11

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管
页数	文件大小	规格书
2页	211K
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中文翻译

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数据手册

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S9014-BP-HF 数据手册

M C C

S9014-B

S9014-C

S9014-D

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.4Watts(Tamb=25^OC) of Power Dissipation.

Collector-current 0.1A

NPN Silicon

Transistors

Collector-base Voltage 50V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking : S9014

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

(V_CB=50Vdc, I_E=0)

Collector Cutoff Current

(V_CE=35Vdc, I_B=0)

Emitter Cutoff Current

(V_EB=3.0Vdc, I_C=0)

0.1

uAdc

I_CEO

I_EBO

ON CHARACTERISTICS

h_FE

DC Current Gain

---

1000

0.3

---

Vdc

(I =1.0mAdc, V_CE=5.0Vdc)

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I =100mAdc, I =5.0mAdc)

Base-Emitter Saturation Voltage

(I =100mAdc, I =5.0mAdc)

1.0

SMALL-SIGNAL CHARACTERISTICS

DIMENSIONS

f_T

Transistor Frequency

(I =10mAdc, V_CE=5.0Vdc, f=30MHz)

150

---

MHz

INCHES

DIM

MIN

.170

.550

.010

.130

.096

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

CLASSIFICATION OF HFE

Rank

Range

100-300

200-600

400-1000

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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