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S8866-128-02

更新时间： 2024-11-04 15:50:27
品牌 Logo 应用领域
HAMAMATSU 局域网
页数 文件大小 规格书
13页 660K
描述
Analog Circuit,

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S8866-128-02 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SFM,Reach Compliance Code：unknown
HTS代码：8542.39.00.01风险等级：5.6
模拟集成电路 - 其他类型：ANALOG CIRCUITJESD-30 代码：R-XSFM-P12
信道数量：1功能数量：1
端子数量：12最高工作温度：60 °C
最低工作温度：-5 °C封装主体材料：UNSPECIFIED
封装代码：SFM封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大供电电压 (Vsup)：5.25 V最小供电电压 (Vsup)：4.75 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

S8866-128-02 数据手册

 浏览型号S8866-128-02的Datasheet PDF文件第2页浏览型号S8866-128-02的Datasheet PDF文件第3页浏览型号S8866-128-02的Datasheet PDF文件第4页浏览型号S8866-128-02的Datasheet PDF文件第5页浏览型号S8866-128-02的Datasheet PDF文件第6页浏览型号S8866-128-02的Datasheet PDF文件第7页 
Photodiode arrays with amplifier  
S8865-64/-128/-256  
S8866-64-02/-128-02  
Photodiode array combined with signal  
processing IC  
The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The  
signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier ar-  
ray, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be  
configured by arranging multiple arrays in a row. For X-ray detection applications, types with phosphor sheet affixed on the  
photosensitive area are also available.  
As the dedicated driver circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865-256 and  
S8866-64-02.)  
Features  
Applications  
Large element pitch: 5 types available  
S8865-64: 0.8 mm pitch × 64 ch  
S8865-128: 0.4 mm pitch × 128 ch  
S8865-256: 0.2 mm pitch × 256 ch  
S8866-64-02: 1.6 mm pitch × 64 ch  
S8866-128-02: 0.8 mm pitch × 128 ch  
Long and narrow line sensors  
Line sensors for X-ray detection  
5 V power supply operation  
Simultaneous integration by using a charge amplifier array  
Sequential readout with a shift register  
(Data rate: 500 kHz max.)  
Low dark current due to zero-bias photodiode operation  
Integrated clamp circuit allows low noise and wide dynamic range  
Integrated timing generator allows operation at two  
different pulse timings  
Types with phosphor sheet affixed on the photosensitive area  
are available for X-ray detection  
(S8865-64G/-128G/-256G, S8866-64G-02/-128G-02)  
Structure  
Parameter  
Element pitch  
Element width  
Symbol*1  
S8865-64  
0.8  
0.7  
0.8  
64  
51.2  
S8865-128  
0.4  
S8865-256  
0.2  
S8866-64-02 S8866-128-02  
Unit  
mm  
mm  
mm  
-
P
W
H
-
-
-
1.6  
1.5  
0.8  
0.7  
0.3  
0.6  
128  
51.2  
0.1  
0.3  
256  
51.2  
Element height  
1.6  
0.8  
Number of elements  
Effective photosensitive area length  
Board material  
64  
102.4  
128  
102.4  
mm  
-
Glass epoxy  
*1: Refer to following figure.  
Enlarged drawing of photosensitive area  
KMPDC0072EA  
1
www.hamamatsu.com  
1234567...13

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