生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.77 | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 10 V |
最大漏极电流 (ID): | 0.02 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 16.5 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S888T-GS18 | TEMIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
S8890 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890_15 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890-02 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890-05 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890-10 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890-15 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890-30 | HAMAMATSU |
获取价格 |
Long wavelength type APD | |
S8890-C | AMI |
获取价格 |
Audio Synthesizer IC, CDIP40, | |
S8890-D | AMI |
获取价格 |
Audio Synthesizer IC, CDIP40, |