Datasheet > S8890-30

S8890-30

更新时间： 2024-11-04 03:11:07

品牌	Logo	应用领域
HAMAMATSU		光电二极管
页数	文件大小	规格书
3页	142K
描述
Long wavelength type APD

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中文翻译

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技术参数
数据手册

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S8890-30 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TO-8, 3 PIN	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.56
其他特性：	HIGH SENSITIVITY	配置：	SINGLE
最大暗电源：	150 nA	红外线范围：	YES
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-20 °C	光电设备类型：	AVALANCHE PHOTODIODE
峰值波长：	940 nm	形状：	ROUND
尺寸：	3 mm	Base Number Matches：	1

S8890-30 数据手册

P H O T O D I O D E

Si APD

S8890 series

Long wavelength type APD

Features

Applications

High sensitivity

YAG laser detection

High gain

Long wavelength light detection

Low terminal capacitance

ꢀ General ratings / Absolute maximum ratings

Absolute maximum ratings

Effective active

area size *²

Effective

active area

Dimensional

outline/Window

material *¹

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Package

(mm)

f0.2

f0.5

f1.0

f1.5

f3.0

(mm²)

0.03

0.19

0.78

1.77

7.0

(°C)

S8890-02

S8890-05

S8890-10

S8890-15

S8890-30

ꢁ/K

➁/K

TO-5

TO-8

-20 to +85

-55 to +125

ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Excess*³

Breakdown

Spectral Peak *³

response sensitivity

range wavelength

Temp.

coefficient

Cut-off *³

frequency

Dark *³

current

voltage

VBR

I^D=100 µA

Terminal *³

capacitance

noise

figure

Gain

Type No.

l=800

V^BR

R^L=50W

l=800

Typ. Max.

(V)

Typ. Max.

(nA)

(V)

(nA)

(nm)

(V/°C)

2.5

(pF)

0.2

0.5

1.5

2.5

8.0

(MHz)

280

S8890-02

S8890-05

S8890-10

S8890-15

S8890-30

0.2

1.5

240

400 to

1100

940

500

800

5.0

230

0.3

100

10.0

15.0

100

150

220

*1: K: borosilicate glass

*2: Area in which a typical gain can be obtained.

*3: Values measured at a gain listed in the characteristics table.

12 3

中文翻译

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