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S8890-10 PDF预览

S8890-10

更新时间: 2024-11-04 03:11:07
品牌 Logo 应用领域
HAMAMATSU 光电二极管
页数 文件大小 规格书
3页 142K
描述
Long wavelength type APD

S8890-10 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-5, 3 PINReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.56
其他特性:HIGH SENSITIVITY配置:SINGLE
最大暗电源:50 nA红外线范围:YES
功能数量:1最高工作温度:85 °C
最低工作温度:-20 °C光电设备类型:AVALANCHE PHOTODIODE
峰值波长:940 nm形状:ROUND
尺寸:1 mmBase Number Matches:1

S8890-10 数据手册

 浏览型号S8890-10的Datasheet PDF文件第2页浏览型号S8890-10的Datasheet PDF文件第3页 
P H O T O D I O D E  
Si APD  
S8890 series  
Long wavelength type APD  
Features  
Applications  
High sensitivity  
YAG laser detection  
High gain  
Long wavelength light detection  
Low terminal capacitance  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Effective active  
area size *2  
Effective  
active area  
Dimensional  
outline/Window  
material *1  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
Type No.  
Package  
(mm)  
f0.2  
f0.5  
f1.0  
f1.5  
f3.0  
(mm2)  
0.03  
0.19  
0.78  
1.77  
7.0  
(°C)  
(°C)  
S8890-02  
S8890-05  
S8890-10  
S8890-15  
S8890-30  
/K  
/K  
TO-5  
TO-8  
-20 to +85  
-55 to +125  
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Excess*3  
Breakdown  
Spectral Peak *3  
response sensitivity  
range wavelength  
Temp.  
coefficient  
of  
Cut-off *3  
frequency  
fc  
Dark *3  
current  
ID  
voltage  
VBR  
ID=100 µA  
Terminal *3  
capacitance  
Ct  
noise  
figure  
x
Gain  
M
Type No.  
l=800  
nm  
l
lp  
VBR  
RL=50W  
l=800  
nm  
Typ. Max.  
(V)  
Typ. Max.  
(nA)  
(V)  
(nA)  
(nm)  
(nm)  
(V/°C)  
2.5  
(pF)  
0.2  
0.5  
1.5  
2.5  
8.0  
(MHz)  
280  
S8890-02  
S8890-05  
S8890-10  
S8890-15  
S8890-30  
0.2  
1.5  
2
15  
240  
400 to  
1100  
940  
500  
800  
5.0  
50  
230  
0.3  
100  
10.0  
15.0  
100  
150  
220  
220  
*1: K: borosilicate glass  
*2: Area in which a typical gain can be obtained.  
*3: Values measured at a gain listed in the characteristics table.  
1

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