Datasheet > S8866-64

S8866-64

更新时间： 2024-11-05 10:06:07

品牌	Logo	应用领域
HAMAMATSU		/
页数	文件大小	规格书
10页	369K
描述
Analog Circuit

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中文翻译

获取价格

技术参数
数据手册

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S8866-64 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01	风险等级：	5.6
模拟集成电路 - 其他类型：	ANALOG CIRCUIT	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

S8866-64 数据手册

Photodiode arrays with ampli¿er

S8866-64/-128

Photodiode array combined with signal

processing IC

The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC

chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and

hold circuit, making the external circuit con¿guration simple. For X-ray detection applications, types (S8866-64G-02, S8866-

128G-02) with phosphor sheet af¿xed on the photosensitive area are also available.

Features

Applications

Large element pitch: 2 types available

S8866-64: 1.6 mm pitch × 64 ch

S8866-128: 0.8 mm pitch × 128 ch

Long and narrow line sensors

5 V power supply operation

Simultaneous integration by using a charge ampli¿er array

Sequential readout with a shift register

(Data rate: 500 kHz max.)

Low dark current due to zero-bias photodiode operation

Integrated clamp circuit allows low noise and wide dynamic range

Integrated timing generator allows operation at two

different pulse timings

Structure

Parameter

Element pitch

Element diffusion width

Element height

Number of elements

Effective photosensitive area length

Board material

Symbol*¹

S8866-64

1.6

1.5

1.6

102.4

S8866-128

Unit

0.8

0.7

0.8

128

102.4

Ceramic

*1: Refer to following ¿gure.

Enlarged drawing of photosensitive area

Photodiode

KMPDC0072EA

www.hamamatsu.com

12 3 4 5 6 7...10

中文翻译

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与S8866-64相关器件

型号	品牌	获取价格	描述	数据表
S8866-64_11	HAMAMATSU	获取价格	Photodiode array combined with signal processing IC
S8866-64G-02	HAMAMATSU	获取价格	Photodiode array combined with signal processing IC for X-ray detection
S886T	VISHAY	获取价格	MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage
S886T-GS18	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
S886TR	VISHAY	获取价格	MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage
S886TR-GS08	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
S886TR-GS18	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
S8880J	PHILIPS	获取价格	NAND Gate, TTL, CDFP14
S8882	BOTHHAND	获取价格	T1/CEPT/ISDN-PRI TRANSFORMER
S8887	BOTHHAND	获取价格	T1/CEPT/ISDN-PRI TRANSFORMER