S886T

更新时间： 2024-11-03 22:22:35

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管电视光电二极管放大器
页数	文件大小	规格书
8页	137K
描述
MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage

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中文翻译

获取价格

技术参数
数据手册

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S886T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	0.03 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	DUAL GATE, ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

S886T 数据手册

S886T/S886TR

Vishay Telefunken

MOSMIC for TV–Tuner Prestage with 12 V Supply

Voltage

MOSMIC - MOS Monolithic Integrated Circuit

Electrostatic sensitive device.

Observe precautions for handling.

RFC

Applications

C block

Low noise gain controlled input stages in UHF-and

VHF- tuner with 12 V supply voltage.

AGC

RF in

RF out

C block

94 9296

Features

Integrated gate protection diodes

Low noise figure

Improved cross modulation at gain reduction

High AGC-range

High gain

SMD package

Biasing network on chip

13 579

94 9279

94 9278

95 10831

S886T Marking: 982

S886TR Marking: 82R

Plastic case (SOT 143)

Plastic case (SOT 143R)

1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Drain - source voltage

Test Conditions

Symbol

Value

7.5

Unit

Drain current

Gate 1/Gate 2 - source peak current

Gate 1/Gate 2 - source voltage

Total power dissipation

Channel temperature

±I

G1/G2SM

±V

G1/G2SM

≤ 60 C

tot

200

150

amb

Storage temperature range

stg

–55 to +150

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thChA

Value

450

Unit

K/W

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85057

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (8)

12 3 4 5 6 7 8

中文翻译

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