生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 0.47 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 70 | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN AND PNP |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN4990 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) | |
RN4990(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP | |
RN4990(TE85R) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, | |
RN4990AFS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN4990FE | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN4990FE(TE85L) | TOSHIBA |
获取价格 |
RN4990FE(TE85L) | |
RN4990FE(TPL3) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR | |
RN4990FE(TPL3,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR | |
RN4990FS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN4990FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 50mA 20volts 6Pin 4.7Kohms |