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RN4991 PDF预览

RN4991

更新时间: 2024-11-15 21:53:43
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
6页 266K
描述
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN4991 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.48最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN4991 数据手册

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RN4991  
TOSHIBA Transistor  
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)  
RN4991  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
Includeing two devices in US6 (ultra super mini type with 6 leads)  
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 10k  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
EIAJ  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
Weight: 6.8mg  
2-2J1A  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2001-06-07  

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