Datasheet > RN1969FE(TE85L)

RN1969FE(TE85L)

更新时间： 2024-11-12 10:56:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	347K
描述
RN1969FE(TE85L)

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数据手册

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RN1969FE(TE85L) 数据手册

RN1967FE~RN1969FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1967FE,RN1968FE,RN1969FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

•

Complementary to RN2967FE to RN2969FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1967FE

RN1968FE

RN1969FE

JEDEC

―

JEITA

TOSHIBA

Weight: 3mg (typ.)

2-2N1A

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

Collector current

RN1967FE

RN1968FE

RN1969FE

EBO

100

°C

Collector power dissipation

Junction temperature

(Note 1)

100

150

Storage temperature range

−55 to150

°C

stg

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Total rating

2010-05-20

12 3 4 5 6

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