Datasheet > RN1969FE(TPL3)

RN1969FE(TPL3)

更新时间： 2024-11-10 05:15:35

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	347K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

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中文翻译

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技术参数
数据手册

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RN1969FE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	70	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1969FE(TPL3) 数据手册

RN1967FE~RN1969FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1967FE,RN1968FE,RN1969FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

•

Complementary to RN2967FE to RN2969FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1967FE

RN1968FE

RN1969FE

JEDEC

―

JEITA

TOSHIBA

Weight: 3mg (typ.)

2-2N1A

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

Collector current

RN1967FE

RN1968FE

RN1969FE

EBO

100

°C

Collector power dissipation

Junction temperature

(Note 1)

100

150

Storage temperature range

−55 to150

°C

stg

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Total rating

2010-05-20

12 3 4 5 6

中文翻译

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与RN1969FE(TPL3)相关器件

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RN1969FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1969FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 47K x 22Kohms Polarity=NPNx2
RN1969TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
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RN1970	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1970(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1970CT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1970FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1970FE(TE85L)	TOSHIBA	获取价格	RN1970FE(TE85L)
RN1970FE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

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