Datasheet > RN1967FE(TPL3)

RN1967FE(TPL3)

更新时间： 2024-11-12 09:29:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	347K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1967FE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1967FE(TPL3) 数据手册

RN1967FE~RN1969FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1967FE,RN1968FE,RN1969FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

•

Complementary to RN2967FE to RN2969FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1967FE

RN1968FE

RN1969FE

JEDEC

―

JEITA

TOSHIBA

Weight: 3mg (typ.)

2-2N1A

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

Collector current

RN1967FE

RN1968FE

RN1969FE

EBO

100

°C

Collector power dissipation

Junction temperature

(Note 1)

100

150

Storage temperature range

−55 to150

°C

stg

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Total rating

2010-05-20

12 3 4 5 6

中文翻译

下载PDF

与RN1967FE(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1967FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1967FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 10K x 47Kohms Polarity=NPNx2
RN1967TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1968	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1968(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1968(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
RN1968CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1968CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1968FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1968FE(TE85L)	TOSHIBA	获取价格	RN1968FE(TE85L)

与RN1967FE(TPL3)相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1967FE(TPL3)

RN1967FE(TPL3) 技术参数

RN1967FE(TPL3) 数据手册

与RN1967FE(TPL3)相关器件

与RN1967FE(TPL3)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1967FE(TPL3)

RN1967FE(TPL3) 技术参数

RN1967FE(TPL3) 数据手册

与RN1967FE(TPL3)相关器件

与RN1967FE(TPL3)相关文章

您还可以找

您在本页遇到什么问题？