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RN1967FS

更新时间： 2024-09-23 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 113K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1967FS 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.5最大集电极电流 (IC)：0.05 A
集电极-发射极最大电压：20 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-F6
JESD-609代码：e0元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.05 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN1967FS 数据手册

 浏览型号RN1967FS的Datasheet PDF文件第2页浏览型号RN1967FS的Datasheet PDF文件第3页浏览型号RN1967FS的Datasheet PDF文件第4页浏览型号RN1967FS的Datasheet PDF文件第5页浏览型号RN1967FS的Datasheet PDF文件第6页 
RN1967FS~RN1969FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1967FS,RN1968FS,RN1969FS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
1.0±0.05  
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
0.8±0.05  
0.1±0.05  
0.1±0.05  
Incorporating a bias resistor into a transistor reduces parts count.  
1
6
5
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
2
•
Complementary to RN2967FS~RN2969FS  
4
3
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
(E1)  
1.EMIITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
R1  
RN1967FS  
RN1968FS  
RN1969FS  
10  
22  
47  
47  
47  
22  
B
E
fS6  
6.COLLECTOR1  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-1F1C  
Weight: 0.001 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
20  
V
V
CBO  
CEO  
RN1967FS~  
1969FS  
Collector-emitter voltage  
20  
Q2  
Q1  
RN1967FS  
RN1968FS  
RN1969FS  
6
7
Emitter-base voltage  
V
C
V
EBO  
15  
1
2
3
Collector current  
I
50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
50  
RN1967FS~  
RN1969FS  
T
j
150  
−55~150  
T
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2007-11-01  
123456

中文翻译

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