Datasheet > RN1968(TE85L,F)

RN1968(TE85L,F)

更新时间： 2024-09-23 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	318K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1968(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	1.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1968(TE85L,F) 数据手册

RN1967~RN1969

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1967, RN1968, RN1969

Unit:mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2967 to RN2969

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1967

RN1968

RN1969

JEDEC

―

JEITA

TOSHIBA

2-2J1B

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(Top View)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN1967 to 1969

RN1967

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

RN1968

EBO

RN1969

Collector current

RN1967 to 1969

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

150

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Start of commercial production

1992-01

2014-03-01

12 3 4 5 6

中文翻译

下载PDF

与RN1968(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1968CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1968CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1968FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1968FE(TE85L)	TOSHIBA	获取价格	RN1968FE(TE85L)
RN1968FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
RN1968FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1968FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 22K x 47Kohms Polarity=NPNx2
RN1968TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1968TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1969	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

与RN1968(TE85L,F)相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

76
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

67
SL74HC10N：高性能三输入与非门解析
2024-09-03

151
AIC1781A 电池充电控制器深度解析
2024-09-03

133

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1968(TE85L,F)

RN1968(TE85L,F) 技术参数

RN1968(TE85L,F) 数据手册

与RN1968(TE85L,F)相关器件

与RN1968(TE85L,F)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1968(TE85L,F)

RN1968(TE85L,F) 技术参数

RN1968(TE85L,F) 数据手册

与RN1968(TE85L,F)相关器件

与RN1968(TE85L,F)相关文章

您还可以找

您在本页遇到什么问题？