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RN1969CT

更新时间： 2024-09-23 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器开关
页数 文件大小 规格书
6页 154K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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RN1969CT 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-N6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.84其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)：0.05 A集电极-发射极最大电压：20 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：100
JESD-30 代码：R-PDSO-N6元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON

RN1969CT 数据手册

 浏览型号RN1969CT的Datasheet PDF文件第2页浏览型号RN1969CT的Datasheet PDF文件第3页浏览型号RN1969CT的Datasheet PDF文件第4页浏览型号RN1969CT的Datasheet PDF文件第5页浏览型号RN1969CT的Datasheet PDF文件第6页 
RN1967CT~RN1969CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1967CT,RN1968CT,RN1969CT  
Switching Applications  
Unit: mm  
1.0±0.05  
Inverter Circuit Applications  
0.15±0.03  
Interface Circuit Applications  
６
１
５
２
４
３
Driver Circuit Applications  
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
0.35±0.02  
0.35±0.02  
0.075±0.03  
0.7±0.03  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
•
Complementary to RN2967CT to RN2969CT  
(E1)  
1.EMITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
Equivalent Circuit and Bias Resistor Values  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
C
6.COLLECTOR1  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
CST6  
R1  
RN1967CT  
RN1968CT  
RN1969CT  
10  
22  
47  
47  
47  
22  
B
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-1K1A  
Weight : 1 mg (typ.)  
Equivalent Circuit  
(top view)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
6
5
2
4
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
Q2  
RN1967CT  
to  
RN1969CT  
V
V
20  
20  
V
V
CBO  
CEO  
Q1  
Collector-emitter voltage  
RN1967CT  
RN1968CT  
RN1969CT  
6
1
3
Emitter-base voltage  
V
7
15  
V
C
EBO  
Collector current  
I
50  
mA  
mW  
°C  
C
RN1967CT  
to  
RN1969CT  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note1)  
50  
T
j
150  
T
stg  
−55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: Total rating  
1
2009-04-17  
123456

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