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RN1969FE

更新时间： 2024-09-23 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 353K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1969FE 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.5其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：70
JESD-30 代码：R-PDSO-F6JESD-609代码：e0
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

RN1969FE 数据手册

 浏览型号RN1969FE的Datasheet PDF文件第2页浏览型号RN1969FE的Datasheet PDF文件第3页浏览型号RN1969FE的Datasheet PDF文件第4页浏览型号RN1969FE的Datasheet PDF文件第5页浏览型号RN1969FE的Datasheet PDF文件第6页 
RN1967FE~RN1969FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1967FE,RN1968FE,RN1969FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more compact  
equipment and save assembly cost.  
•
Complementary to RN2967FE to RN2969FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1967FE  
RN1968FE  
RN1969FE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
―
―
E
JEITA  
TOSHIBA  
Weight: 3mg (typ.)  
2-2N1A  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
6
5
2
4
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
RN1967FE  
RN1968FE  
RN1969FE  
6
7
V
C
V
Q2  
EBO  
Q1  
15  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
P
(Note 1)  
100  
1
3
T
j
150  
Storage temperature range  
T
−55 to150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Note 1: Total rating  
1
2010-05-20  
123456

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