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RN1968CT(TE85L) PDF预览

RN1968CT(TE85L)

更新时间: 2024-09-23 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 147K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

RN1968CT(TE85L) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.8
最大集电极电流 (IC):0.05 A最小直流电流增益 (hFE):120
元件数量:2极性/信道类型:NPN
最大功率耗散 (Abs):0.05 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

RN1968CT(TE85L) 数据手册

 浏览型号RN1968CT(TE85L)的Datasheet PDF文件第2页浏览型号RN1968CT(TE85L)的Datasheet PDF文件第3页浏览型号RN1968CT(TE85L)的Datasheet PDF文件第4页浏览型号RN1968CT(TE85L)的Datasheet PDF文件第5页浏览型号RN1968CT(TE85L)的Datasheet PDF文件第6页 
RN1967CT~RN1969CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1967CT,RN1968CT,RN1969CT  
Switching Applications  
Unit: mm  
1.0±0.05  
Inverter Circuit Applications  
0.15±0.03  
Interface Circuit Applications  
Driver Circuit Applications  
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
0.35±0.02  
0.35±0.02  
0.075±0.03  
0.7±0.03  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Complementary to RN2967CT to RN2969CT  
(E1)  
1.EMITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
Equivalent Circuit and Bias Resistor Values  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
C
6.COLLECTOR1  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
CST6  
R1  
RN1967CT  
RN1968CT  
RN1969CT  
10  
22  
47  
47  
47  
22  
B
JEDEC  
JEITA  
E
TOSHIBA  
2-1K1A  
Weight : 1 mg (typ.)  
Equivalent Circuit  
(top view)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
6
5
2
4
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
Q2  
RN1967CT  
to  
RN1969CT  
V
V
20  
20  
V
V
CBO  
CEO  
Q1  
Collector-emitter voltage  
RN1967CT  
RN1968CT  
RN1969CT  
6
1
3
Emitter-base voltage  
V
7
15  
V
C
EBO  
Collector current  
I
50  
mA  
mW  
°C  
C
RN1967CT  
to  
RN1969CT  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note1)  
50  
T
j
150  
T
stg  
55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: Total rating  
1
2009-04-17  

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