Datasheet > RN1968(TE85L)

RN1968(TE85L)

更新时间： 2024-09-23 14:17:55

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	312K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal

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RN1968(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.74	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.468
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	80
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

RN1968(TE85L) 数据手册

RN1967~RN1969

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1967,RN1968,RN1969

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit:mm

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2967 to RN2969

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1967

RN1968

RN1969

JEDEC

―

JEITA

TOSHIBA

2-2J1B

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN1967 to 1969

RN1967

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

RN1968

EBO

RN1969

Collector current

RN1967 to 1969

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

150

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Equivalent Circuit

(Top View)

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

*: Total rating

2010-05-20

12 3 4 5 6

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与RN1968(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
RN1968(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
RN1968CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1968CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1968FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1968FE(TE85L)	TOSHIBA	获取价格	RN1968FE(TE85L)
RN1968FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
RN1968FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1968FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 22K x 47Kohms Polarity=NPNx2
RN1968TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1968TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

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