Datasheet > RN1707TE85R

RN1707TE85R

更新时间： 2024-11-01 20:08:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	289K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1707TE85R 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code：	unknown	风险等级：	5.74
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.213	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	6 pF	集电极-发射极最大电压：	50 V
配置：	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	80
JESD-30 代码：	R-PDSO-G5	元件数量：	2
端子数量：	5	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	VCEsat-Max：	0.3 V
Base Number Matches：	1

RN1707TE85R 数据手册

RN1707~RN1709

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1707,RN1708,RN1709

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2707 to RN2709

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1707

RN1708

RN1709

USV

JEDEC

―

JEITA

TOSHIBA

Weight: 6.2mg (typ.)

2-2L1A

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(Top View)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1707 to 1709

Collector-emitter voltage

RN1707

RN1708

RN1709

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

RN1707 to 1709

150

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

2010-05-21

12 3 4 5 6

中文翻译

下载PDF

与RN1707TE85R相关器件

型号	品牌	获取价格	描述	数据表
RN1708	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1708(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN1708(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1708,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1708JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1708JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1708TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1708TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1709	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1709(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,

与RN1707TE85R相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1707TE85R

RN1707TE85R 技术参数

RN1707TE85R 数据手册

与RN1707TE85R相关器件

与RN1707TE85R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1707TE85R

RN1707TE85R 技术参数

RN1707TE85R 数据手册

与RN1707TE85R相关器件

与RN1707TE85R相关文章

您还可以找

您在本页遇到什么问题？