Datasheet > RN1710JE(TE85L)

RN1710JE(TE85L)

更新时间： 2024-11-05 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	256K
描述
RN1710JE(TE85L)

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中文翻译

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技术参数
数据手册

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RN1710JE(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

RN1710JE(TE85L) 数据手册

RN1710JE,RN1711JE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1710JE,RN1711JE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Wide range of resistor values are available to use in various circuit

designs.

Complementary to RN2710JE~RN2711JE

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

―

Weight: 0.003 g (typ.)

Equivalent Circuit

(top view)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

100

150

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6

中文翻译

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与RN1710JE(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
RN1710JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1710TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1710TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1711	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1711(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1711(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1711,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1711JE	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1711JE(TE85L)	TOSHIBA	获取价格	RN1711JE(TE85L)
RN1711JE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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